3 edition of Stochastic modeling of crack initiation and short-crack growth under creep and creep-fatigue conditions found in the catalog.
Stochastic modeling of crack initiation and short-crack growth under creep and creep-fatigue conditions
by NASA, For sale by the National Technical Information Service in [Washington, D.C.], [Springfield, Va
Written in English
|Statement||Takayuki Kitamura, Louis J. Ghosn, and Ryuichi Ohtani.|
|Series||NASA technical memorandum -- 101358.|
|Contributions||Ghosn, Louis J., Ohtani, Ryuichi, 1938-, United States. National Aeronautics and Space Administration.|
|The Physical Object|
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